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簡要描述：硫化鎵晶體 GaS（Gallium Sulfide）晶體尺寸：~10毫米電學(xué)性能：半導(dǎo)體晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°晶體類型：合成晶體純度：＞99.995%
產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家更新時(shí)間：2024-06-03訪 問 量：1668詳細(xì)介紹
硫化鎵晶體 GaS(Gallium Sulfide)
晶體尺寸：~10毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14
Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.
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