基于二氧化硅襯底的三角形單層二硫化鉬

簡要描述：Isolated monolayer thickness MoS2 are grown onto SiO2/Si substrates.

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更新時間：2025-05-08
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詳細介紹

Isolated monolayer thickness MoS2 are grown onto SiO2/Si substrates. This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across SiO2/Si substrate. While some regions reach continuity with coalesced MoS2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer MoS2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. Overall, MoS2 monolayer thickness triangles are more luminescent compared to MoS2 triangles grown onto sapphire substrates.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Thermal oxide (SiO2/Si) substrates
Coverage	Isolated and Partially Merged Monolayer Triangles
Electrical properties	1.85 eV Direct Bandgap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, photoluminescence, TEM, EDS

Specifications

1) Well-separated MoS2 domains across SiO2/Si chip.

2) One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Atomically smooth surface with roughness < 0.1-0.2 nm.

4) Highly uniform surface morphology. MoS2 triangles are scattered across sample

5) 99.9995% purity as determined by nano-SIMS measurements

6) Repeatable Raman and photoluminescence response

7) High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) SiO2/Si chips but our research and development team can transfer MoS2 triangles onto variety of substrates including PET and quartz without significant compromising of material quality.

9) MoS2 monolayer triangles do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.

Supporting datasets [for Monolayer MoS2 Triangles on SiO2/Si]

Transmission electron images (TEM) acquired from CVD grown MoS2 isolated triangles on SiO2/Si confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown MoS2 isolated triangles on SiO2/Si confirming Mo:S 1:2 ratios

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown MoS2 isolated triangles on SiO2/Si Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.

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基于二氧化硅襯底的三角形單層二硫化鉬

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