Monolayer tungsten disulfide （1H-WS?） flakes have been exfoliated from bulk tungsten disulfide （2H-WS?） onto 90nm thermal oxide and measures from 5micron up to 40micron in size.

Monolayer tungsten diselenide （1H-WSe?） flakes have been exfoliated from bulk tungsten diselenide （2H-WSe?） onto 90nm thermal oxide and measures from 5micron up to 40micron in size.

Substrate: Sapphire （c-cut） Quartz （Silica） TEM grids （please supply grids） Thermal Oxide （SiO2/Si） Polyethylene terephthalate – PET Substrates

Newly acquired ion implantation accelerator unit allows 2Dsemiconductors USA to create desired amounts of defects by alpha particle irradiation process at select amount of doses.

高純度黑磷晶體 Black Phosphorus-Crystal 晶體結(jié)構(gòu)：正斜方晶結(jié)構(gòu)晶體尺寸：~10mm 電學(xué)性能：半導(dǎo)體 晶體結(jié)構(gòu)：斜方晶系 晶胞參數(shù)：a = 0.331 nm, b= 1.048, c = 0.437 nm, α = β = γ = 90° 晶體類型：合成 晶體純度：99.995% 性質(zhì)：半導(dǎo)體

黑砷磷/晶體黑磷-砷合金 BP-As alloy （Black Phosphorus-Arsenic Alloy） 晶體尺寸：~mm 電學(xué)性能：半導(dǎo)體 晶體結(jié)構(gòu)：斜方晶系 晶胞參數(shù)：晶胞參數(shù)取決于合金中的成分。p/As比值為1 a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90° 晶體類型：合成 晶體純度：99.995%